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| FDS8958A_F085 Dual N & P-Channel PowerTrench(R) MOSFET February 2010 FDS8958A_F085 Dual N & P-Channel PowerTrench(R) MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. tm Features * Q1: N-Channel RDS(on) = 0.028 @ VGS = 10V RDS(on) = 0.040 @ VGS = 4.5V * Q2: P-Channel RDS(on) = 0.052 @ VGS = -10V RDS(on) = 0.080 @ VGS = -4.5V * * * * Fast switching speed High power and handling capability in a widely used surface mount package Qualified to AEC Q101 RoHS Compliant Q2 7.0A, 30V -5A, -30V D1 D D1 D DD2 D2 D 5 6 G2 S2 G 4 3 SO-8 Pin 1 SO-8 7 8 Q1 2 1 G1 S1 S S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous TA = 25C unless otherwise noted Parameter Q1 30 (Note 1a) Q2 30 20 -5 -20 2 1.6 0.9 13 -55 to +150 Units V V A W mJ C 20 7 20 2 1.6 0.9 54 - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Single Pulse Avalanche Energy (Note 1a) (Note 1c) EAS TJ, TSTG (Note 3) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8958A FDS8958A_F085 13" 1 12mm 2500 units www.fairchildsemi.com (c)2010 Fairchild Semiconductor Corporation FDS8958A_F085 Rev. A FDS8958A_F085 Dual N & P-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Test Conditions ID = 250 A VGS = 0 V, VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 0 V Type Min Typ Max Units Q1 Q2 Q1 Q2 Q1 Q2 All All Q1 Q2 Q1 Q2 Q1 1 -1 1.9 -1.7 -4.5 4.5 19 27 24 42 57 65 20 -20 25 10 575 528 145 132 65 70 2.1 6.0 30 -30 25 -23 1 -1 100 -100 3 -3 V mV/C A nA nA V mV/C 28 42 40 52 78 80 A S m Off Characteristics Gate-Body Leakage, Reverse VGS = -20 V, (Note 2) On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125C ID = 6 A VGS = 4.5 V, ID = -5 A VGS = -10 V, VGS = -10 V, ID = -5 A, TJ = 125C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A VDS = -5 V, ID =-5 A Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance pF pF pF Q2 Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz Gate Resistance FDS8958A_F085 Rev. A 2 www.fairchildsemi.com FDS8958A_F085 Dual N & P-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2 VDD = -15 V, ID = -1 A, VGS = -10V, RGEN = 6 Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 VDS = -15 V, ID = -5 A,VGS = -10 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 7 5 13 23 14 3 9 11.4 9.6 1.7 2.2 2.1 1.7 16 14 10 24 37 25 6 17 16 13 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user' board design. s Maximum Continuous Drain-Source Diode Forward Current Maximum Plused Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A Q1 IF = 7 A, diF/dt = 100 A/s Q2 IF = -5 A, diF/dt = 100 A/s (Note 2) (Note 2) (Note 2) 0.75 -0.88 19 19 9 6 1.3 -1.3 20 -20 1.2 -1.2 A A V nS nC a) 78/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125/W when 2 mounted on a .02 in pad of 2 oz copper c) 135/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Starting TJ = 25C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2). FDS8958A_F085 Rev. A 3 www.fairchildsemi.com FDS8958A_F085 Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q1 (N-Channel) 20 16 ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10.0V 2.2 4.0V 3.5V 6.0V 12 1.8 4.5V VGS = 3.5V 1.4 4.0 4.5V 5.0 6.0V 10.0V 8 3.0V 4 1 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.6 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = 7A VGS = 10.0V 0.07 0.06 0.05 0.04 0.03 TA = 25oC 0.02 0.01 TA = 125oC ID = 3.5A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 20 VDS = 5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) 16 10 1 0.1 0.01 0.001 TA = 125oC ID, DRAIN CURRENT (A) 12 TA = 125oC -55oC 25oC 25oC -55oC 8 4 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8958A_F085 Rev. A 4 www.fairchildsemi.com FDS8958A_F085 Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q1 (N-Channel) 10 800 ID = 7A VDS = 10V 20V 600 15V f = 1MHz VGS = 0 V VGS, GATE-SOURCE VOLTAGE (V) 8 CAPACITANCE (pF) 6 Ciss 400 4 Coss 200 2 Crss 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 10 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) 10 100ms 1ms 10ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25 C o 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 1 0.01 0.1 tAV, TIME IN AVALANCHE (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching Capability Figure 50 SINGLE PULSE C/W RJ A = 135 TA = 25 C P(pk), PEAK TRANSIENT POWER (W) 40 30 20 10 0 0.001 0.01 0.1 1 t 1, TIME (sec) 10 Figure 11. Single Pulse Maximum Power Dissipation. FDS8958A_F085 Rev. A 5 0.1 Tj=125 1 10 100 www.fairchildsemi.com 1 IAS, AVALANCHE CURRENT (A) RDS(ON) LIMIT 100s Tj=25 100 1000 FDS8958A_F085 Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q2 (P-Channel) 30 -5.0V -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -ID, DRAIN CURRENT (A) -6.0V 2 1.8 1.6 -4.5V 1.4 1.2 1 0.8 0 1 2 3 4 5 6 0 6 12 18 24 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) -5.0V -6.0V -7.0V -8.0V -10V VGS=-4.0V 20 -4.0V 10 -3.5V -3.0V 0 Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -5A VGS = -10V ID = -2.5A 0.2 1.4 1.2 0.15 TA = 125oC 0.1 TA = 25oC 0.05 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 14. On-Resistance Variation with Temperature. 15 -IS, REVERSE DRAIN CURRENT (A) Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V -ID, DRAIN CURRENT (A) 12 TA = -55oC 125oC 25oC 10 1 0.1 0.01 0.001 0.0001 0 VGS =0V TA = 125oC 25oC -55oC 9 6 3 0 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8958A_F085 Rev. A 6 www.fairchildsemi.com FDS8958A_F085 Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q2 (P-Channel) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE RJA(t) = r(t) * R A RJA = 135 C/W P(pk) P(pk) t1 t1 t2 t2 0.01 TJ - TA = P * R J A(t) Duty Cycle, D = t1 / t 2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 23. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8958A_F085 Rev. A 7 www.fairchildsemi.com FDS8958A_F085 Dual N & P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM PowerTrench(R) FRFET(R) The Power Franchise(R) (R) Auto-SPMTM Global Power ResourceSM PowerXSTM Green FPSTM Build it NowTM Programmable Active DroopTM Green FPSTM e-SeriesTM CorePLUSTM QFET(R) TinyBoostTM QSTM GmaxTM CorePOWERTM TinyBuckTM Quiet SeriesTM GTOTM CROSSVOLTTM TinyCalcTM IntelliMAXTM RapidConfigureTM CTLTM TinyLogic(R) ISOPLANARTM Current Transfer LogicTM TM TINYOPTOTM (R) MegaBuckTM DEUXPEED TinyPowerTM Dual CoolTM Saving our world, 1mW/W/kW at a timeTM MICROCOUPLERTM TinyPWMTM EcoSPARK(R) SignalWiseTM MicroFETTM TinyWireTM EfficentMaxTM SmartMaxTM MicroPakTM TriFault DetectTM SMART STARTTM MicroPak2TM (R) TRUECURRENTTM* MillerDriveTM SPM(R) SerDesTM STEALTHTM MotionMaxTM Fairchild(R) SuperFETTM Motion-SPMTM Fairchild Semiconductor(R) SuperSOTTM-3 OptiHiTTM FACT Quiet SeriesTM UHC(R) SuperSOTTM-6 OPTOLOGIC(R) FACT(R) (R) Ultra FRFETTM (R) OPTOPLANAR SuperSOTTM-8 FAST (R) UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM FlashWriter(R) * PDP SPMTM XSTM (R)* FPSTM Power-SPMTM F-PFSTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 FDS8958A_F085 Rev. A 8 www.fairchildsemi.com |
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